Semiconductor device manufacturing: process – Making field effect device having pair of active regions... – On insulating substrate or layer
Patent
1996-09-27
1998-09-22
Niebling, John
Semiconductor device manufacturing: process
Making field effect device having pair of active regions...
On insulating substrate or layer
438378, 148DIG1, 148DIG122, H01L 2100, H01L 21331
Patent
active
058113231
ABSTRACT:
There is Disclosed a semiconductor device comprising a silicon film formed on a substrate having at least a surface formed of an insulative material, the silicon film being heat-treated at a temperature below 600.degree. C. and being partially coated with a silicon oxide film formed by electronic cyclotron resonance plasma CVD.
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Little Thomas W.
Miyasaka Mitsutoshi
Lebentritt Michael S.
Niebling John
Seiko Epson Corporation
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