Process for fabricating a thin film transistor

Details Process for fabricating a thin film transistor Process for fabricating a thin film transistor

1997-04-29

2000-01-04

Wilczewski, Mary

Semiconductor device manufacturing: process

Making field effect device having pair of active regions...

On insulating substrate or layer

438439, H01L 21336, H01L 2131, H01L 2184

Patent

active

060109246

ABSTRACT:
A semiconductor device comprising at least two thin film transistors on a substrate having an insulating surface thereon, provided that the thin film transistors are isolated by oxidizing the outer periphery of the active layer of each of the thin film transistors to the bottom to provide an oxide insulating film.

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"Ultra LSI Process Data Hand Book", Science Forum Co., Apr. 15, 1982, pp. 124-131.
Ito et al., "Thin Film Technique for VLSI" Maruzen Co., Sep. 30, 1986, pp. 19-20.

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