Semiconductor device manufacturing: process – Formation of semiconductive active region on any substrate – Amorphous semiconductor
Reexamination Certificate
2006-06-13
2006-06-13
Richards, N. Drew (Department: 2815)
Semiconductor device manufacturing: process
Formation of semiconductive active region on any substrate
Amorphous semiconductor
C438S429000, C438S442000, C438S481000
Reexamination Certificate
active
07060596
ABSTRACT:
An initial single-crystal substrate1having, locally and on the surface, at least one discontinuity in the single-crystal lattice is formed. The initial substrate is recessed at the discontinuity. The single-crystal lattice is amorphized around the periphery of the recess. A layer of amorphous material having the same chemical composition as that of the initial substrate is deposited on the structure obtained. The structure obtained is thermally annealed in order to recrystallize the amorphous material so as to be continuous with the single-crystal lattice of the initial substrate.
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Preliminary Search Report dated Sep. 11, 2001 for French Application No. 0100414.
Gris Yvon
Menut Olivier
Jorgenson Lisa K.
Richards N. Drew
STMicroelectronics S.A.
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