Process for fabricating a semiconductor device with a patterned

Details Process for fabricating a semiconductor device with a patterned Process for fabricating a semiconductor device with a patterned

1998-06-11

2000-10-03

Bowers, Charles

Semiconductor device manufacturing: process

Coating with electrically or thermally conductive material

To form ohmic contact to semiconductive material

438 49, 438197, 438668, 438686, H01L 2144

Patent

active

06127268&

ABSTRACT:
A process is disclosed for fabricating a semiconductor device with a patterned metal layer (9). A layer (7) of a material with poor adhesion capability to the metal is deposited on the surface of a semiconductor substrate. On the layer (7), pattern lines (8) separated by a distance a are formed of a material with good adhesion capability to the metal, and the metal layer (9) is deposited such that by suitable choice of the ratio of the distance a to its thickness d and of its material properties, the metal layer (9) is caused to adhere only to the pattern lines (8) and to the area of the layer (7) between the pattern lines (8).

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Lundstrom, et al., "A hydrogen-sensitive MOS field-effect transistor", Applied Physics Letters, vol. 26, No. 2, Jan. 15, 1975.

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