Semiconductor device manufacturing: process – Coating with electrically or thermally conductive material
Reexamination Certificate
2007-05-29
2007-05-29
Whitehead, Jr., Carl (Department: 2813)
Semiconductor device manufacturing: process
Coating with electrically or thermally conductive material
Reexamination Certificate
active
10876183
ABSTRACT:
The present invention provides a method for manufacturing a semiconductor device comprising an insulating layer that includes a seed layer formed on a silicon substrate. The seed layer is formed by exposing a hydrogen-terminated surface of the silicon substrate in a substantially oxygen-free environment to a seed layer precursor comprising a methylated metal. Forming the insulating layer further includes depositing a dielectric material on the seed layer.
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Parent case U.S. Appl. No. 10/306,565, filed Nov. 27, 2002; entitled “A Process for Fabricating a Semiconductor Device Having an Insulating Layer Formed Over a Semiconductor Substrate” to Yves Chabal, et al. currently pending.
Chabal Yves
Frank Martin Michael
Green Martin L.
Wilk Glen David
Agere Systems Inc.
Harrison Monica D.
Jr. Carl Whitehead
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