Process for fabricating a metallized interconnect structure in a

Details Process for fabricating a metallized interconnect structure in a Process for fabricating a metallized interconnect structure in a

1995-11-02

1997-05-27

Niebling, John

Semiconductor device manufacturing: process

Coating with electrically or thermally conductive material

To form ohmic contact to semiconductive material

438652, 438660, 438688, H01L 2128

Patent

active

056331991

ABSTRACT:
A process for fabricating a metallized interconnect structure in a semiconductor device includes the steps of depositing a first aluminum layer (22) into a via opening (16) in a dielectric layer (18). A doping layer (24) is deposited by high density plasma sputtering to form a portion thereof in the bottom of the via opening (16). A second aluminum layer (26) is chemical vapor deposited to overlie the doping layer (24) and to fill the via opening (16). An annealing process can then be carried out to diffuse metal dopants from the doping layer (24) into nearby metal regions to provide a uniformly doped metal region within the via opening (16).

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Cheung, K. P. et al., "Improved CVD Aluminum Deposition Using In-Situ Sputtered Nucleation Layers," Jun. 12-13, 1990, VLSI Multilevel Interconnection Conference, pp. 303-309.
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