Process for fabricating a device using nitrogen implantation int

Details Process for fabricating a device using nitrogen implantation int Process for fabricating a device using nitrogen implantation int

1997-05-29

1998-12-22

Chaudhuri, Olik

Semiconductor device manufacturing: process

Coating with electrically or thermally conductive material

To form ohmic contact to semiconductive material

438660, 438659, 257755, H01L 2176

Patent

active

058519220

ABSTRACT:
The invention is directed to a process for forming p.sup.+ and n.sup.+ gates on a single substrate. A polycrystalline silicon or amorphous silicon layer is formed on a substrate with n-type and p-type regions formed therein and with a layer of silicon dioxide formed thereover and the structure is subjected to a low temperature anneal. A layer of metal silicide is then formed over the structure and n-type and p-type dopants are implanted into the resulting structure. A nitrogen implant is performed after the n-type dopant is implanted into the structure. The nitrogen implant reduces the amount to which the p-type dopant diffuses through the silicide layer and into the n.sup.+ gates. A dielectric material is then formed over the structure and patterned, after which the structure is subjected to additional processing steps to form gate stacks over the n-regions and the p-regions of the substrate.

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