Process for fabricating a contactless electrical erasable EPROM

Details Process for fabricating a contactless electrical erasable EPROM Process for fabricating a contactless electrical erasable EPROM

1993-05-28

1998-03-03

Thomas, Tom

Fishing, trapping, and vermin destroying

437 52, H01L 218247

Patent

active

057233500

ABSTRACT:
An improved fabrication process employing relatively non-critical masks permits the fabrication of high density electrically programmable and erasable EEPROM or FLASH-EPROM devices. In practice the novel process permits the fabrication of a contactless, cross-point array providing for a more comfortable "pitch" of bitline metal-definition while realizing a cell layout with a gate structure which extends laterally over adjacent portions of field oxide, thus establishing an appropriate capacitive coupling between control and floating gates. Two alternative embodiments are described.

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Eitan, "Alternate Metal Virtual Ground (AMG)-A New Scaling Concept for Very High Density EPROMS" 12 Electron Device Letters (Aug. 1991) pp. 450-452.

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