Process for fabricating a compound semiconductor device

Details Process for fabricating a compound semiconductor device Process for fabricating a compound semiconductor device

1993-12-07

1994-12-20

Breneman, R. Bruce

Fishing, trapping, and vermin destroying

437105, 437107, 437126, 437133, 372 43, 372 45, H01L 2120

Patent

active

053745884

ABSTRACT:
A compound semiconductor device and a process for manufacturing it is disclosed. The process comprises the steps of forming a first conduction type first clad layer, a first conduction type or second conduction type activated layer, a second conduction type second clad layer, and a second conduction type cap layer upon a first conduction type semiconductor substrate, forming a first conduction type electrode and a second conduction type electrode, and forming a rectangular pole shaped laser diode, a triangular pole shaped detecting photo-diode, and a triangular pole shaped receiving photo-diode by carrying out a single round of anisotropic etching. According to the present invention, the high density can be easily realized, so that the power consumption and the manufacturing cost can be saved.

REFERENCES:
patent: 4570172 (1986-02-01), Henry
patent: 4675518 (1987-06-01), Oimura
patent: 4736231 (1988-04-01), Ayabe
patent: 4941146 (1990-07-01), Kobayashi
patent: 4989214 (1991-01-01), Kwa
patent: 5032879 (1991-07-01), Buchmann
patent: 5091757 (1992-02-01), Yoshida
N. Bouadma et al. "GaAs:GaAlas Ridge Waveguides . . . " IEEE Journal of Quantum Electronics, vol. 25, No. 11, Nov. 1989, pp. 2219-2228.
Anderson, G. W. et al. "High Speed Planar GoAs Photoconductors . . . " Appl. Phys. Lett. 53(4) Jul. 25, 1988, pp. 313-315.

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