Coating processes – Direct application of electrical – magnetic – wave – or... – Plasma
Patent
1997-01-06
1998-06-09
Lusignan, Michael
Coating processes
Direct application of electrical, magnetic, wave, or...
Plasma
427578, 427585, 427587, 4272555, 118729, 118730, C23C 1644, H05H 124
Patent
active
057630208
ABSTRACT:
A process for depositing a layer of uniform thickness on an uneven surface of a substrate is disclosed. The layer could be deposited by plasma or chemical vapor deposition (CVD). The uneven surface of the substrate has horizontal surfaces and vertical sidewalls and is located on a movable platform. The platform is tilted and rotated as the layer is deposited so that the ions or the flow of chemical vapor reaches the horizontal surface and the sidewall at a similar incident angle. Thereby, the layer is evenly deposited and has a uniform thickness with proper coverage and planarization.
REFERENCES:
patent: 3663273 (1972-05-01), Porter et al.
patent: 4714536 (1987-12-01), Freeman et al.
patent: 4979467 (1990-12-01), Kamaji et al.
patent: 5081069 (1992-01-01), Parker et al.
patent: 5260106 (1993-11-01), Kawarada et al.
patent: 5342660 (1994-08-01), Cann et al.
patent: 5551983 (1996-09-01), Shepard, Jr. et al.
Solid State Electronic Devices, Second Edition, Prentice-Hall, Inc., by Ben G. Streetman, pp. 20-22 (1980).
Lusignan Michael
Parker Fred J.
United Microelectronics Corporation
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