Process for etching SiO.sub.2 utilizing HF vapor and an organic

Details Process for etching SiO.sub.2 utilizing HF vapor and an organic Process for etching SiO.sub.2 utilizing HF vapor and an organic

1977-09-01

1978-11-28

Massie, Jerome W.

Adhesive bonding and miscellaneous chemical manufacture

Delaminating processes adapted for specified product

Delaminating in preparation for post processing recycling step

96 36, 156646, 156657, 156659, 156661, 252 791, 427331, 427385R, H01L 21308

Patent

active

041274377

ABSTRACT:
Process for etching SiO.sub.2 with hydrogen fluoride gas, utilizing an organic material such as negative photoresist as a catalyst. In one embodiment, the negative photoresist is applied directly to the portions of the SiO.sub.2 to be removed, and in another the negative photoresist is spaced away from the SiO.sub.2. In some embodiments, positive photoresist is applied to the portions of the SiO.sub.2 which are to be retained.

REFERENCES:
patent: 3471291 (1969-10-01), Schaefer
patent: 3494768 (1970-02-01), Schaefer
patent: 3520687 (1970-07-01), Schaefer
patent: 3535137 (1970-10-01), Haller et al.
patent: 3615956 (1971-10-01), Irving et al.
patent: 3867216 (1975-02-01), Jacob
patent: 3935117 (1976-01-01), Suzuki et al.
patent: 3960559 (1976-06-01), Suzuki et al.
patent: 3992208 (1976-11-01), Nagata et al.

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