Process for etching silicon dioxide layer without micro masking

Details Process for etching silicon dioxide layer without micro masking Process for etching silicon dioxide layer without micro masking

1992-06-12

1994-03-22

Hearn, Brian E.

Adhesive bonding and miscellaneous chemical manufacture

Delaminating processes adapted for specified product

Delaminating in preparation for post processing recycling step

156625, 156650, 437225, 437228, H01L 2100, H01L 2102, B44C 122, C03C 1500

Patent

active

052960943

ABSTRACT:
A process for etching a silicon dioxide layer is disclosed. The novel two step etch process is used, for example, to perform a contact etch through a BPSG layer. Both etch steps are carried out in a flow of O.sub.2 and CHF.sub.3. In the first step, a high flow rate of oxygen (approximately 19 SCCM) is used. During this step, the bulk of the oxide is removed, without the problem of micro masking wherein small localized regions remain partially un-etched. In the second step, the remaining oxide is removed in a lower O.sub.2 flow rate, giving good oxide to silicon selectivity.

REFERENCES:
patent: 4511430 (1985-04-01), Chen et al.
Howard Leung, "Introducing the Precision Etch 8310 Molecular Backside Cooling (MBC) Capability", Applied CVD and Etch Technologies in Review, Spring 1990, pp. 12-16.

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