Process for etching semiconductor devices

Details Process for etching semiconductor devices Process for etching semiconductor devices

1990-10-18

1992-03-31

Powell, William A.

Adhesive bonding and miscellaneous chemical manufacture

Delaminating processes adapted for specified product

Delaminating in preparation for post processing recycling step

156646, 156656, 1566591, 252 791, 20419232, 427 38, B44C 122, C23F 102

Patent

active

051005050

ABSTRACT:
The subject invention is directed to a process for etching a semiconductor device to form a predetermined etched pattern therein. The semiconductor device which is provided herein typically has a plurality of layers. At least one of these layers comprises a metal-containing material having a metal content of at least about 80% by weight. Etching the semiconductor device with an etchant material forms a predetermined etched pattern therein. This pattern includes the formation of horizontal and upright sidewalls in the etched layers which comprise the metal-containing material. Thus, each of the upright sidewalls has a profile which is either substantially vertically sloped or is positively sloped. This is the case even though the chemical etchant composition, when employed by itself to etch the above-described metal-containing layers, forms sidewall profiles which are substantially negatively sloped configuration. The etchant material employed herein comprises a chemical etchant composition and a coating composition. In one preferred form of this invention the coating composition comprises water vapor or a gaseous oxide of nitrogen, particularly N.sub.2 O, and a silicon-containing compound, respectively. The etchant material is in a substantially gas phase during the etching of the semiconductor device and deposits a protective film on the upright sidewalls of the etched semiconductor device. The silicon-containing compound typically comprises a silicon tetrahalide, preferably comprising SiCl.sub.4, SiBr.sub.4, or SiF.sub.4. However, the most preferred compound being SiBr.sub.4.

REFERENCES:
patent: 4505782 (1985-03-01), Jacob et al.
patent: 4547261 (1985-10-01), Maa et al.
patent: 4734157 (1988-03-01), Carbaugh et al.
patent: 4992136 (1991-02-01), Tachi et al.
patent: 5024722 (1991-06-01), Cathey

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