Process for etching recesses in a silicon substrate

Details Process for etching recesses in a silicon substrate Process for etching recesses in a silicon substrate

1988-04-13

1990-03-27

Lacey, David L.

Adhesive bonding and miscellaneous chemical manufacture

Delaminating processes adapted for specified product

Delaminating in preparation for post processing recycling step

156654, 156659, 1566591, 156662, H07L 21306

Patent

active

049117831

ABSTRACT:
In a process for etching complicatedly structured recesses in a silicon substrate, in which acid mixtures containing HF and HNO.sub.3 are used, the problems occurring with a photoresist mask are avoided, on the one hand, by using an SiO.sub.2 mask layer and on the other hand, by fabricating the mask layer beforehand with a thickness profile corresponding to the depth profile to be etched, thereby completely separating the masking and etching steps from each other.

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