Process for etching holes

Adhesive bonding and miscellaneous chemical manufacture – Delaminating processes adapted for specified product – Delaminating in preparation for post processing recycling step

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Details

156644, 156647, 156661, 156667, 204192R, 252 792, 346140R, 427383R, 427383B, 427404, C23F 100, G01D 1518

Patent

active

041069757

ABSTRACT:
A method for etching at least one aperture having a defined crystallographic geometry in single crystals which includes masking the crystal to protect predetermined portions thereof from being etched, and then anisotropically etching with a mixture of sulfuric acid and phosphoric acid.

REFERENCES:
patent: 3042566 (1962-07-01), Hardy
patent: 3823408 (1974-07-01), Gordon
patent: 4007464 (1977-02-01), Bassous et al.
patent: 4008111 (1977-02-01), Rutz
Reisman et al., "The Chemical Polishing of Sapphire and MgAl Spinel" Journal of Electrochemical Society vol. 118, No. 10 (Oct. 1971) pp. 1653-1657.

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