Process for etching copper containing metallic film and forming

Details Process for etching copper containing metallic film and forming Process for etching copper containing metallic film and forming

1995-02-15

1996-04-09

Breneman, R. Bruce

Etching a substrate: processes

Gas phase etching of substrate

Etching inorganic substrate

216 67, 216 75, 1566431, 1566461, 1566561, H01L 2100

Patent

active

055053220

ABSTRACT:
A process for dry etching a copper containing film formed on a substrate is performed by using an etching gas while heating at a temperature below 200.degree. C. The etching gas is selectable from the group consisting of a mixed gas of a N containing gas, an O containing gas, a N and O containing gas, or a mixed gas of a N containing gas, an O containing gas and a F containing gas, or a mixed gas of a N and O containing gas and a F containing gas. By this etching gas, Cu(NO.sub.3).sub.2 is formed to be sublimed.

REFERENCES:
patent: 4466859 (1984-08-01), Nelson
patent: 4468284 (1984-08-01), Nelson

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