Process for etching

Adhesive bonding and miscellaneous chemical manufacture – Delaminating processes adapted for specified product – Delaminating in preparation for post processing recycling step

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Details

156646, 156656, 156657, 1566591, 156345, 20419237, 252 791, 437233, 437245, H01L 21306, B44C 122, C23F 102, C03C 1500

Patent

active

051104083

ABSTRACT:
The present invention relates to the etching of a gate film, a tungsten film, a silicon film, etc. In the present invention, use is made of an etching gas comprising a mixture composed of a reductive fluoride gas, a hydrocarbon gas and a halogen gas having a larger atomic diameter than a material to be etched, or a mixture composed of a reductive fluoride gas and a Cl-containing hydrocarbon gas, and the process comprises the step of conducting anisotropic etching of a material to be etched with an etching gas (a reductive fluoride gas), the step of forming a protective film by a depositing gas (a hydrocarbon gas), and the step of removing excess deposits formed as the protective film by means of a gas reactive with the protective film (a halogen gas or a Cl-containing hydrogen gas), wherein anisotropic etching is conducted by forming a protective film on a side wall while removing excess deposits formed as the protective film, thus enabling the anisotropic etching to be conducted with good accuracy.

REFERENCES:
patent: 4473435 (1984-09-01), Zaffropoulo et al.
patent: 4713141 (1987-12-01), Tsang
patent: 4741799 (1988-05-01), Chen et al.

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