Process for epitaxial growth on a corrugated wafer

Details Process for epitaxial growth on a corrugated wafer Process for epitaxial growth on a corrugated wafer

1984-06-26

1985-12-31

Ozaki, George T.

Metal treatment

Process of modifying or maintaining internal physical...

Chemical-heat removing or burning of metal

29576E, 29569L, 148172, 148173, 148175, 156624, H01L 21368

Patent

active

045619158

ABSTRACT:
A process for epitaxial growth which effects epitaxial growth while suppressing thermal deformation of surface corrugations of an InGaAsP/InP system semiconductor substrate. Deformation of surface corrugations is suppressed by disposing a GaAs.sub.1-z P.sub.z (0.1.ltoreq.z.ltoreq.0.8) wafer over and in close contact with the surface of the semiconductor substrate until immediately before a start of the epitaxial growth process.

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patent: 4227962 (1980-10-01), Antypas
patent: 4468258 (1984-08-01), Pfister et al.
Sakai et al., IEEE J. of Quantum Electronics, vol. QE-18, No. 8, Aug. 1982, pp. 1272-1277.
Kinoshita et al., Electronics Letters, vol. 19, No. 6, Mar. 1983, pp. 215 and 216.
Antypas, Appl. Phys. Lett., vol. 37 (1), Jul. 1, 1980, pp. 64 and 65.
Nagai et al., Jpn. J. of Applied Physics, vol. 22, No. 5, May 1983, pp. L291-L293.

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