Method of growth of compound semiconductor

Details Method of growth of compound semiconductor Method of growth of compound semiconductor

1984-07-02

1985-12-31

Saba, William G.

Metal treatment

Process of modifying or maintaining internal physical...

Chemical-heat removing or burning of metal

29576E, 29576T, 148174, 148DIG25, 148DIG59, 148DIG72, 148DIG160, 156612, 156DIG104, 357 16, 427 87, H01L 2120, H01L 21324

Patent

active

045619166

ABSTRACT:
A method for the growth of a compound semiconductor comprises growing on a silicon substrate a polycrystalline layer of a desired Group III-V compound semiconductor or a crystal layer of the desired Group III-V compound semiconductor having inferior crystallinity, growing on the formed layer at least one layer of the same semiconductor as the desired Group III-V compound semiconductor and at least one layer of a Group III-V compound semiconductor having a lattice constant approximating the lattice constant of the desired Group III-V compound semiconductor, which layers are alternately disposed, and growing on the alternately disposed layers a layer of the desired Group III-V compound semiconductor.

REFERENCES:
patent: 3454434 (1969-07-01), Jackson et al.
patent: 3473978 (1969-10-01), Jackson et al.
patent: 3941647 (1976-03-01), Druminski
patent: 3963538 (1976-06-01), Broadie et al.
patent: 3963539 (1976-06-01), Kemlage et al.
patent: 3985590 (1976-10-01), Mason
patent: 4120706 (1978-10-01), Mason
patent: 4174422 (1979-11-01), Matthews et al.
Bischoff et al., "Selective Growth of GaAs" I.B.M. Tech. Discl. Bull., vol. 16, No. 9, Feb. 1974, p. 3072.

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