Process for epitaxial deposition of silicon

Details Process for epitaxial deposition of silicon Process for epitaxial deposition of silicon

1988-03-14

1989-10-17

Powell, William A.

Adhesive bonding and miscellaneous chemical manufacture

Delaminating processes adapted for specified product

Delaminating in preparation for post processing recycling step

156612, 156613, 156650, 156654, 156657, 156662, 4272552, 437 85, H01L 21306, H01L 21205, C03B 2300, B44C 122

Patent

active

048744646

ABSTRACT:
The present invention relates to a high throughput single crystal epitaxial deposition process which achieves increased uniformity, both wafer to wafer and across the wafer surface. There is provided an epitaxial deposition process characterized by low-level cooling periods which minimize temperature changes between deposition cycles and inter-cycle cleaning so that each new wafer is presented with a substantially equivalent deposition environment.

REFERENCES:
patent: 3473978 (1969-10-01), Jackson et al.
patent: 4138306 (1979-02-01), Niwa

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