Process for elimination of standing wave effect of photoresist

Details Process for elimination of standing wave effect of photoresist Process for elimination of standing wave effect of photoresist

1994-06-16

1996-12-03

Dang, Thi

Radiation imagery chemistry: process, composition, or product th

Imaging affecting physical property of radiation sensitive...

Making electrical device

430317, 430950, 437229, 15665911, 15666111, 1566621, H01L 2100

Patent

active

055807011

ABSTRACT:
A method is disclosed which eliminates standing waves in the photoresist layer of VLSI devices. A layer of anti-reflecting material is deposited between the photoresist and its underlying poly layer. This anti-reflecting layer is formed with an appropriate thickness and index of refraction so that none of the lithographic light incident on the photoresist is reflected back from the underlying layer. This eliminates the interference between incident and reflected light in the photoresist, thus preventing the occurrence of standing waves.

REFERENCES:
patent: 5437961 (1995-08-01), Yano et al.

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