Process for electrical insulation in microelectronics, applicabl

Details Process for electrical insulation in microelectronics, applicabl Process for electrical insulation in microelectronics, applicabl

1996-05-14

1998-07-28

Utech, Benjamin

Coating processes

Direct application of electrical, magnetic, wave, or...

Plasma

427579, 427588, 4273762, 4274193, H05H 124

Patent

active

057860394

ABSTRACT:
The invention relates to a process for electrical insulation of conductive or semiconductor materials of a substrate, characterized in that it comprises at least the following steps:

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G. Smolinksy et al., "Material Properties of Spin-on Silicon oxide (SOX) for Fully Recessed NMOS Field Isolation," J. Electrochem. Soc. vol. 137, No. 1, Jan. 1990 pp. 229-234.
Dobson et al., "Advanced SiO.sub.2 Planarization Using Silicone and H.sub.2 O.sub.2," Semiconductor International, Dec. 1994, pp. 85-88.

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