Process for dynamic control of the concentration of one or more

Details Process for dynamic control of the concentration of one or more Process for dynamic control of the concentration of one or more

1994-09-16

1996-03-19

Dang, Thi

Adhesive bonding and miscellaneous chemical manufacture

Delaminating processes adapted for specified product

Delaminating in preparation for post processing recycling step

1566431, 216 60, H01L 2100, H05H 100, G01N 2100

Patent

active

055000762

ABSTRACT:
A process for dynamically adjusting the concentration of one or more reactants in a plasma assisted press, such as a plasma etch process or a plasma deposition process, is describe. The concentration of one or more reactants, as well as the concentration of a non-reactive gas, in a plasma enhance process for the formation of an integrated circuit structure is quantitatively monitored by actinometry to derive a ratio of such concentrations of reactant to non-reactant. The concentration of the reactant or reactants in the plasma processing chamber is then maintained in the chamber by adjusting the flow of such reactant or reactants into the chamber based on changes in such ratio based on such continuous quantitative monitoring of the both the concentration of the reactant or reactants and that of the non-reactive (non-changing concentration) component.

REFERENCES:
patent: 4289188 (1981-09-01), Mizutani et al.
patent: 4430151 (1984-02-01), Tsukada
patent: 4457820 (1984-07-01), Bergeron et al.
patent: 4704199 (1987-11-01), Yokokawa et al.
patent: 5348614 (1994-09-01), Jerbic
Auciello, Orlando, et al., "Optical Diagnostic Techniques for Low Pressure Plasmas and Plasma Processing", Plasma Diagnostics, vol. 1, Boston: Academic Press, Inc., 1989, pp. 1-46.
Khoury, H. A., "Real-Time Etch Plasma Monitor System", IBM Technical Disclosure Bulletin, vol. 25, No. 11A, Apr., 1983, pp. 5721-5723.

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