Process for dry etching a silicon nitride layer

Details Process for dry etching a silicon nitride layer Process for dry etching a silicon nitride layer

1991-04-04

1993-01-19

Dang, Thi

Adhesive bonding and miscellaneous chemical manufacture

Delaminating processes adapted for specified product

Delaminating in preparation for post processing recycling step

156646, 156653, 156157, 1566591, 156662, H01C 2100

Patent

active

051804662

ABSTRACT:
A silicon nitride layer, particularly on a silicon dioxide layer, is dry etched successfully by using an etching gas including SF.sub.6, preferably also CH.sub.2 F.sub.2. This dry etching provides a high selectivity of etching of Si.sub.3 N.sub.4 to SiO.sub.2 and may be used for the LOCOS (local oxidation of silicon) process to reduce the width of so-called "bird beaks."

REFERENCES:
patent: 4473435 (1984-09-01), Zafiropoulo et al.
patent: 4529476 (1985-07-01), Kawamoto et al.
patent: 4581101 (1986-04-01), Senoue et al.
patent: 4601782 (1986-07-01), Bianchi et al.
patent: 4666555 (1987-05-01), Tsang
Bienvogl, H. R. et al. "Plasma Etching of Polysilicon and Si.sub.3 N.sub.4 in SF.sub.6 with Some Impact on MOS Device Characteristics." IEEE Transactions on Electron Devices, vol. ED-28, No. 11 (Nov. 1981), pp. 1333-1337.

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