Semiconductor device manufacturing: process – Introduction of conductivity modifying dopant into... – Ion implantation of dopant into semiconductor region
Reexamination Certificate
2005-08-23
2005-08-23
Mai, Anh Duy (Department: 2814)
Semiconductor device manufacturing: process
Introduction of conductivity modifying dopant into...
Ion implantation of dopant into semiconductor region
C438S433000, C438S525000
Reexamination Certificate
active
06933215
ABSTRACT:
In a method of producing a doped semiconductor structure with a trench, it is possible to set the doping of the trench side walls independently from the doping of the trench bottom, and to set different doping concentrations of the individual trench side walls relative to each other. In the method, a mask layer with a window therein is provided on a surface of a semiconductor body, and then a first doping step, a trench etching step, and a second doping step are carried out successively through this window while this one mask layer remains in place on the surface of the semiconductor body. Further etching and doping steps can be carried out successively also through this window of the mask layer.
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“Process for Manufacturing a DMOS Transistor”, by Christoph Bromberger et al.; U.S. Appl. No. 10/167,961, filed Jun. 11, 2002, pp. 1 to 14 and 2 sheets of drawings.
“Process for Manufacturing a DMOS Transistor”, by Christoph Bromberger et al.; U.S. Appl. No. 10/167,960; filed Jun. 11, 2002, pp. 1 to 14 and 2 sheets of drawings.
“Process for Manufacturing a DMOS Transistor”, by Christoph Bromberger et al.; U.S. Appl. No. 10/167,959; filed Jun. 11, 2002, pp. 1 to 14 and 2 sheets of drawings.
Bromberger Christoph
Dietz Franz
Dudek Volker
Graf Michael
Herrfurth Joern
Atmel Germany GmbH
Duy Mai Anh
Fasse W. F.
Fasse W. G.
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