Process for deposition of semiconductor films

Details Process for deposition of semiconductor films Process for deposition of semiconductor films

2007-03-06

2007-03-06

Pham, Long (Department: 2814)

Semiconductor device manufacturing: process

Making device or circuit emissive of nonelectrical signal

Compound semiconductor

C438S235000, C438S312000, C438S318000, C438S320000, C427S124000, C427S255120, C427S255290, C427S255700, C257S019000

Reexamination Certificate

active

11124340

ABSTRACT:
Chemical vapor deposition processes utilize higher order silanes and germanium precursors as chemical precursors. The processes have high deposition rates yet produce more uniform films, both compositionally and in thickness, than films prepared using conventional chemical precursors. In preferred embodiments, trisilane is employed to deposit SiGe-containing films that are useful in the semiconductor industry in various applications such as transistor gate electrodes.

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