Process for deposition of a thin layer on an oxidized layer...

Details Process for deposition of a thin layer on an oxidized layer... Process for deposition of a thin layer on an oxidized layer...

2006-04-18

2006-04-18

Trinh, Michael (Department: 2822)

Semiconductor device manufacturing: process

Coating of substrate containing semiconductor region or of...

Insulative material deposited upon semiconductive substrate

C438S240000

Reexamination Certificate

active

07030043

ABSTRACT:
A thin layer comprising at least a metal and a non-metallic chemical element is deposited on an oxidized layer of a substrate arranged in a reactor. The thin layer is formed by a plurality of superposed atomic layers formed by repetition of a reaction cycle comprising at least a first step of injecting a first halogenated metallic reagent into the reactor, a first reactor purging step, a second step of injecting a second reagent comprising the non-metallic chemical element into the reactor and a second reactor purging step. The process comprises, after each deposition of an atomic layer, at least one densification sequence of the atomic layer comprising a third purging step, an additional injection step of the second reagent and a fourth purging step. The time length of a densification sequence is substantially longer than the time length of a reaction cycle.

REFERENCES:
patent: 6958302 (2005-10-01), Ahn et al.
patent: 2002/0190294 (2002-12-01), Iizuka et al.
patent: 2004/0023461 (2004-02-01), Ahn et al.
patent: 2004/0025787 (2004-02-01), Selbrede et al.
patent: 2004/0043630 (2004-03-01), Vaartstra et al.
patent: 2004/0171280 (2004-09-01), Conley et al.
Takaaki Kawahara et al.; “Effect of Purge Time on the Properties of HfO2Films Prepared by Atomic Layer Deposition”; Ieice Trans. Electron; vol. E87-C, No. 1; Jan. 2004; pp 2-8.
M.- H. Cho et al.; “Thermal stability and structural characteristics of HfO2 films on Si (100) grown by atomic-layer deposition”; Applied Physics Letter, vol. 81, No. 3; Jul. 15, 2002; pp 472-474.
G.D. Wilk et al.; “High-K gate dielectrics: Current Status and materials properties considerations”; Journal of Applied Physics; vol. 89, No. 10; May 15, 2001; pp 5243-5275.
J.- F. Damlencourt et al.; “Electrical and physico-chemical characterization of HfO2/SiO2gate oxide stacks prepared by atomic layer deposition”; Solid State Electronics, 47 (2003), pp 1613-1616.

Affiliated with

Also associated with

Rating

Process for deposition of a thin layer on an oxidized layer... does not yet have a rating. At this time, there are no reviews or comments for this patent.

If you have personal experience with Process for deposition of a thin layer on an oxidized layer..., we encourage you to share that experience with our LandOfFree.com community. Your opinion is very important and Process for deposition of a thin layer on an oxidized layer... will most certainly appreciate the feedback.

Rate now

Comments { 0 }

Profile ID: LFUS-PAI-O-3568370