Process for depositing optical thin films on both planar and non

Chemistry: electrical and wave energy – Processes and products – Coating – forming or etching by sputtering

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20419228, 20419229, 20429826, C23C 1434

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active

057980276

ABSTRACT:
A rotary cylindrical sputtering system incorporates separate, separately-controlled linear magnetron sputter deposition and reaction zones for sputter depositing materials such as refractory metals and forming oxides and other compounds and alloys of such materials. In one aspect, the associated process involves rotating or translating workpieces past the differentially pumped, atmospherically separated, sequentially or simultaneously operated deposition and reaction zones and is characterized by the ability to form a wide range of materials, by high throughput, and by the ability to form durable optical quality thin films of nominal refractive indices and controlled coating thickness, including both constant and selectively varied thickness profiles.

REFERENCES:
patent: 3576729 (1971-04-01), Sigournay et al.
patent: 3635811 (1972-01-01), Lane
patent: 3829373 (1974-08-01), Kuehnle
patent: 4046666 (1977-09-01), McClanahan et al.
patent: 4128466 (1978-12-01), Harding et al.
patent: 4142958 (1979-03-01), Wei et al.
patent: 4151059 (1979-04-01), Kuehnle
patent: 4151064 (1979-04-01), Kuehnle
patent: 4261808 (1981-04-01), Walter
patent: 4298444 (1981-11-01), Chahroudi
patent: 4313815 (1982-02-01), Graves, Jr. et al.
patent: 4361114 (1982-11-01), Gurev
patent: 4361472 (1982-11-01), Morrison, Jr.
patent: 4392931 (1983-07-01), Maniv et al.
patent: 4420385 (1983-12-01), Hartsough
patent: 4424103 (1984-01-01), Cole
patent: 4434037 (1984-02-01), Crank
patent: 4492620 (1985-01-01), Matsuo et al.
patent: 4562093 (1985-12-01), Mario et al.
patent: 4588490 (1986-05-01), Cuomo et al.
patent: 4591418 (1986-05-01), Snyder
patent: 4622919 (1986-11-01), Suzuki et al.
patent: 4637869 (1987-01-01), Glocker et al.
patent: 4655167 (1987-04-01), Nakamura et al.
patent: 4661229 (1987-04-01), Hemming et al.
patent: 4674621 (1987-06-01), Takahashi
patent: 4675096 (1987-06-01), Tateishi et al.
patent: 4692233 (1987-09-01), Casey
patent: 4693803 (1987-09-01), Casey et al.
patent: 4777908 (1988-10-01), Temple et al.
patent: 4793908 (1988-12-01), Scott et al.
patent: 4798663 (1989-01-01), Herklotz et al.
patent: 4824544 (1989-04-01), Mikalesen et al.
patent: 4834023 (1989-05-01), Saitoh et al.
patent: 4842704 (1989-06-01), Collins et al.
patent: 4862032 (1989-08-01), Kaufman et al.
patent: 5225057 (1993-07-01), LeFebvre et al.
Schiller et al, "Alternating ion plating--A method of high-rate ion vapor deposition," J. Vac. Sci. Technol., vol. 12, No. 4, pp. 858-864, Jul./Aug., 1975.
Anderson et al, "Magnetron reactive sputtering deposition of Cu.sub.2 S/CdS solar cells," Proceedings, 2nd European Community Photovoltaic Solar Energy Conference, pp. 890-897, 1979.
Schiller et al, "Reactive d.c. sputtering with the magnetron-plasmatron for tantalum pentoxide and titanium dioxide films," Thin Solid Films, vol. 63, pp. 369-375, Apr., 1979.
Schiller et al, "Advances in high rate sputtering with magnetron-plasmatron processing and instrumentation," Thin Solid Films, vol. 64, pp. 455-467, Apr., 1979.
Kienel et al, "Cold light mirrors," Industrial Research/Development, pp. 135-139, Jan., 1980.
Springer et al, "Characterization of aluminum--aluminum nitride coatings sputter deposited using the pulsed gas process," J. Vac. Sci. Technol., vol. 20, No. 3, pp. 462-465, Mar., 1982.
Scherer et al, "Reactive high rate d.c. sputtering of oxides," Apr., 1984.
Ceasar et al, "Multiple drum fabrication for ion beam deposited a-Si:H photoreceptors," Xerox Disclosure Journal, vol. 9, No. 3, pp. 173-175, May/Jun. 1984.
Carmichael et al, "Coating techniques offer solutions to industrial needs," Optical Engineering Reports, p. 3A, Jul., 1987.
Kaufman et al, "End-hall ion source," J. Vac. Sci. Technol. A, vol. 5, No. 4, Jul./Aug., 1987.
Makous et al, "Superconducting and structural properties of sputtered thin films of YBa.sub.2 Cu.sub.3 O.sub.7-x," Appl. Phys. Letts., vol. 51, No. 25, pp. 2164-2166, Dec. 21, 1987.
Todorov et al, "Oxidation of silicon by a low-energy ion beam: Experiment and model," Appl. Phys. Letts., vol. 52, No. 1, pp. 48-50, Jan. 4, 1988.
"Hollow Cathodes and Hollow Cathode Neutralizers", brochure by Ion Tech., Inc., Jan. 1988.
"ECR Plasma Source", brochure by Applied Science and Technology, Inc., Nov., 1988.
"C-Mag Rotatable Magnetron Cathode", brochure by Airco Coating Technology, 1988.
"1989 Photonics Technology Trends", Photonics Spectra, Jan., 1989.
"Mark I Gridless Ion Source", brochure by Commonwealth Scientific Corporation (date unknown).
Mattox, "Ion Plating Technology," Deposition Technologies for Films and Coatings, pp. 244-260, (date unknown).

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