Coating processes – Direct application of electrical – magnetic – wave – or... – Plasma
Patent
1997-03-28
1999-04-27
King, Roy V.
Coating processes
Direct application of electrical, magnetic, wave, or...
Plasma
427575, 427573, 427249, 427109, 427299, B05D 306, C23C 1626
Patent
active
058979247
ABSTRACT:
A process for depositing an adherent polycrystalline diamond thin film on a glass substrate, by chemical vapor deposition (CVD) at 1 to 15 torr and low temperatures of the substrate of between about 350 to 600.degree. C. using hydrogen and methane and optionally carbon dioxide. The substrate has diamond particles deposited on it or is polished with diamond particles prior to CVD. The process produces films which are clear and adherent.
REFERENCES:
patent: 4925701 (1990-05-01), Jansen et al.
patent: 5028451 (1991-07-01), Ito et al.
patent: 5145711 (1992-09-01), Yamazaki et al.
patent: 5180571 (1993-01-01), Hosoya et al.
patent: 5183685 (1993-02-01), Yamazaki
patent: 5185179 (1993-02-01), Yamazaki et al.
patent: 5188862 (1993-02-01), Itatani et al.
patent: 5200231 (1993-04-01), Bachmann et al.
patent: 5204144 (1993-04-01), Cann et al.
patent: 5230931 (1993-07-01), Yamazaki et al.
patent: 5240749 (1993-08-01), Chow
patent: 5242711 (1993-09-01), DeNatale et al.
patent: 5243170 (1993-09-01), Maruyama et al.
patent: 5260106 (1993-11-01), Kawarada et al.
patent: 5270077 (1993-12-01), Knemeyer et al.
patent: 5286524 (1994-02-01), Slutz et al.
patent: 5298286 (1994-03-01), Yang et al.
patent: 5302231 (1994-04-01), Bovenkerk et al.
patent: 5311103 (1994-05-01), Asmussen et al.
Liou et al, J. Mater. Res. vol. 5 No. 11, Nov. 1990, pp. 2305-2312.
Shing et al, Thin Solid Films, 212 (1992) pp. 150-155.
Bachmann et al, Diamond and Related Materials, 1. (1991) pp. 1-12.
Chen et al, Surface and Coatings Technology, 54155 (1992) pp. 368-373.
Chen et al, Scripta Metallurgica et Materialia, vol. 31, No. 6, (1994) pp. 775-780.
Pierson, Handbook of Chemical Vapor Deposition (CVD), Principles, Technology and Applications, Noyes Publications, 1992, pp. 168-173.
Barnes et al, Appl. Phys. lett. 62(1) Jan. 1993, pp. 37-39.
Katoh et al, Jpn. J. Appl. Phys. vol. 33 (1994) pp. L94-96.
Chen et al, J. Appl. Phys 74(7) Oct. 1993, pp. 4483-4488.
Harris, D. C., Proc. SPIE, 2286 pp. 218-228 (1994) No month data|.
Ong, T.P., et al., Appl. Phys. Lett., 55(20) pp. 2063-2065 (1989) No month data|.
Pickrell, D.J., et al., J. Mater. Res. 6 pp. 1264-1276 (1991) No month data|.
Muranaka, Y., et al., J. Vac. Sci. Technol. A 9 pp. 76-84 (1991) No month data|.
Joseph, A., et al., 2nd International Conference on the Applications of Diamond Films and Related Materials, Eds. M. Yoshikawa, et al., pp. 429-432 MYU Tokyo (1993) No month data |.
Nariman, K. E., et al., Chem. Mater. 3 p. 391-394 (1991) No month data |.
Ulczynski, M. J., et al., Advances in New Diamond Science and Technology, Eds. S. Saito, et al., MYU, Tokyo (1994) pp. 41-44 No month data |.
Masood, A., et al., J. Electrochem. Soc., 138 L67-L68 (1991) No month data|.
Grot, S. A., et al.,Diamond Thin-Film Recessed Gate Field-Effect Transistors Fabricated by Electron Cyclotron Resonance Plasma Etching vol. 13, No. 9 pp. 462-464 (1992) No month data|.
Asmussen Jes
Reinhard Donnie K.
Ulczynski Michael J.
Board of Trustees operating Michigan State University
King Roy V.
McLeod Ian C.
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