Coating processes – Direct application of electrical – magnetic – wave – or... – Plasma
Patent
1992-04-24
1992-12-29
Pianalto, Bernard
Coating processes
Direct application of electrical, magnetic, wave, or...
Plasma
427249, 427250, 427255, 4272552, 427294, 427295, 427585, 427586, 427575, 427571, B05D 306
Patent
active
051750201
ABSTRACT:
A process for depositing a layer containing boron and nitrogen on a substrate by decomposing one or more N-substituted borazoles in the presence of the substrate, in particular by a plasma CVD process.
REFERENCES:
patent: 3321337 (1967-05-01), Patterson
patent: 4440108 (1984-04-01), Little et al.
patent: 4545968 (1985-10-01), Hirano et al.
patent: 4971779 (1990-11-01), Paine, Jr. et al.
Patent Abstracts of Japan, vol. 10, No. 350, p. C-387, abstract of Hoshino, Japanese Published Application No. JP 61-149477, "Formation of Boron Nitride Film".
Patent Abstracts of Japan, vol. 10, No. 350, p. C-387, abstract of Hoshino, Japanese Published Application No. JP 61-149478, "Production of Boron Nitride Film of Hexagonal or Cubic Crystal".
Patent Abstracts of Japan, vol. 10, p. 99c388, abstract of Yagi, Japanese Published Application No. JP 61-153279, "Production of Material Coated with Hard Boron Nitride".
Patent Abstracts of Japan, vol. 10, No. 383, p. C-393, abstract of Yagi, Japanese Published Application No. JP 61-174378, "Production of Rigid Material Coated with Boron Nitride".
Patent Abstracts of Japan, vol. 11, No. 132, p. C-417, abstract of Yagi, Japanese Published Application No. JP 61-266576, "Production of Member Coated with High-Hardness Boron Nitride".
Bonham et al., "Trimethylamine-Borane, (Dimethylamino) Borane, and N,N',N"-Trimethylborazine", Inorganic Synthesis, pp. 8-12.
Shanfield et al., "Ion Beam Synthesis of Cubic Boron Nitride", J. Vac. Sci. Tech., vol. 1, No. 2, pp. 323-325 (1983).
Schmolla et al., "Amorphous BN Films Produced in a Double-Plasma Reactor for Semiconductor Apls.", Solid-State Electronics, vol. 26, No. 10, pp. 931-939 (1983).
Halverson, "Effects of Charge Neutralization on Ion-Beam-Deposited Boron Nitride Films", J. Vac. Sci. Tech., vol. 3, No. 6, pp. 2141-2146 (1985).
Lynch et al., "Transmition-Metal-Promoted Reactions of Boron-Hydrides, Syntheses Perlimerizations . . . ", J. Am. Chem. Soc., vol. 111, pp.6201-6209 (1989).
Kouvetakis et al., "Composition and Structure of Boron Nitride Films Deposited by Chemical Vapor Deposition from Borazine", J. Vac. Sci. Tech., vol. 8, No. 6, pp. 3929-3933 (1990).
Bringmann Udo
Doellein Guenther
Klages Claus-Peter
Meyer Hans
Weber Andreas
Pianalto Bernard
Solvay Deutschland GmbH
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