Process for delineating photoresist lines at pattern edges only

Details Process for delineating photoresist lines at pattern edges only Process for delineating photoresist lines at pattern edges only

1984-04-30

1986-02-04

Bowers, Jr., Charles L.

Radiation imagery chemistry: process, composition, or product th

Imaging affecting physical property of radiation sensitive...

Making electrical device

430 5, 430191, 430192, 430311, 430312, 430314, 430323, 430324, 430325, 430328, 430330, G03F 726, G03C 500

Patent

active

045686319

ABSTRACT:
An optical photolithographic process in which resist lines having widths in the micron and sub-micron range are produced without the use of a fine line photomask. A positive photoresist having an additive for image reversal is applied to the surface of a semiconductor substrate. The photoresist is exposed through a photomask to ultraviolet light. The edges of the opaque sections of the mask diffract the ultraviolet light, forming partially exposed areas between the exposed and unexposed areas formed in the photoresist. After development in a solvent to remove the exposed areas, the photoresist undergoes an image reversal process. The photoresist is first baked at 100.degree. C. for 30 minutes. During this bake step, the photoactive decomposition products present in the partially exposed areas react, freezing the solubility of the partially exposed areas with respect to that of the unexposed areas. The photoresist is then blanket exposed and developed in a solvent, leaving the partially exposed areas on the substrate. The resulting thin resist lines can be used to form narrow isolation trenches by coating the substrate with a quartz film and lifting off the resist lines.

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Pacansky, J. et al., IBM J. Res. Develop., vol. 23, No. 1, 1/1979, pp. 42-51.
Hamel et al., "Image Reversal Lift-Off Process," IBM TDB, vol. 24, No. 10, Mar. 1982, p. 5063.
Moritz, "Linewidth Control with Image Reversal," IBM TDB, vol. 23, No. 7A, Dec. 1980, pp. 2725-2726.

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