Process for defining vias through silicon nitride and polyamide

Details Process for defining vias through silicon nitride and polyamide Process for defining vias through silicon nitride and polyamide

1988-05-31

1990-12-18

Simmons, David

Adhesive bonding and miscellaneous chemical manufacture

Delaminating processes adapted for specified product

Delaminating in preparation for post processing recycling step

156646, 156653, 156657, 1566591, 156668, 437229, 437241, H01L 21308

Patent

active

049784196

ABSTRACT:
A process for defining vias through a polyimide and silicon nitride layer is disclosed. After the deposition of a first layer of silicon nitride and a second layer of polyimide, a layer of photoresist capable of producing negatively sloped walls is then lithographically defined with a pattern of vias. After the photoresist is developed, the polyimide layer is etched with a CF.sub.4 O.sub.2 gas mixture using the developed photoresist layer as etch mask. The silicon nitride layer is then etched with a CF.sub.4 /H.sub.2 gas mixture using the etched polyimide layer as an etch mask.

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