Process for creating an etch mask suitable for deep plasma etche

Details Process for creating an etch mask suitable for deep plasma etche Process for creating an etch mask suitable for deep plasma etche

1990-07-19

1991-10-01

Powell, William A.

Adhesive bonding and miscellaneous chemical manufacture

Delaminating processes adapted for specified product

Delaminating in preparation for post processing recycling step

156646, 156651, 156653, 156656, 156657, 1566591, 1566611, 156662, H01L 21306, B44C 122, C03C 1500, C23F 100

Patent

active

050531050

ABSTRACT:
A process, compatible with reduced-pitch masking technology, for creating a metal etch mask that will not erode in a halogenated-plasma etch environment. The process begins by creating an isolation layer (preferably of silicon dioxide) on top of the layer to be etched (typically a silicon substrate). A thin layer of a metal selected from a group consisting of cobalt, nickel, palladium, iron, and copper is then deposited on top of the isolation layer. A hard-material mask (preferably of silicon dioxide) is then created on top of the metal layer as though it were to be the final etch mask. A layer of polysilicon is then blanket deposited on the surface of the in-process wafer. The polysilicon layer must be sufficiently thick to entirely convert exposed regions of the underlying metal layer to silicide during a subsequent elevated temperature step. Only metal in regions not covered by the hard-material mask is converted to silicide. Unreacted polysilicon is then removed with a wet polysilicon etch, followed by the removal of the hard-material mask with a wet etch selective for silicon dioxide over the existent metal silicide, followed by removal of the metal silicide with a wet etch selective for silicide over silicon dioxide to avoid undercutting the oxide isolation layer beneath the metal layer remnants. The metal layer remnants constitute a metal mask which precisely duplicates the pattern of the hard-material mask.

REFERENCES:
patent: 4389429 (1983-06-01), Soclof
patent: 4657628 (1987-04-01), Holloway et al.
patent: 4925524 (1990-05-01), Beatty
patent: 4925813 (1990-05-01), Autier et al.

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