Process for creating a metal etch mask which may be utilized for

Details Process for creating a metal etch mask which may be utilized for Process for creating a metal etch mask which may be utilized for

1990-07-17

1991-03-19

Hearn, Brian E.

Fishing, trapping, and vermin destroying

437225, 437229, 437 65, 437 67, 148DIG105, H01L 21465

Patent

active

050010859

ABSTRACT:
A process for creating a metal etch mask from either cobalt, nickel, palladium, iron or copper which may be utilized for halogen-plasma excavation of deep trenches. The process begins by creating a thin isolation layer of either silicon nitride or silicon dioxide on top of the layer to be trenched. A thin layer of one of the metals selected from the aforementioned list of five is then created on top of the isolation layer. A layer of polysilicon is then blanket deposited on top of the refractory metal layer. Photoresist masking is then performed as though the photoresist were the actual pattern for the trench etch. Exposed portions of the polysilicon layer are then etched away with an anisotropic etch. Following a photoresist strip, the substrate and overlying layers are subjected to an elevated temperature step, which causes the polysilicon to react with the underlying metal layer to form metal silicide. In substrate regions where no polysilicon overlies the metal layer, no silicide is formed. Next, the metal silicide is removed with a wet etch. A metal mask remains that is essentially an exact image of the original photoresist mask. Trenches may be etched to any desired depth with virtually no consumption of the metal mask. Once the trench etch is complete, the metal etch mask may be stripped utilizing a wet etch reagent such as aqua regia.

REFERENCES:
patent: 4578859 (1986-04-01), Hause et al.
patent: 4584027 (1986-04-01), Metz, Jr. et al.
patent: 4717681 (1988-01-01), Curran
patent: 4826564 (1989-05-01), Desilets et al.
patent: 4946804 (1990-08-01), Pritchard et al.
patent: 4956306 (1990-09-01), Fuller et al.

Affiliated with

Also associated with

Rating

Process for creating a metal etch mask which may be utilized for does not yet have a rating. At this time, there are no reviews or comments for this patent.

If you have personal experience with Process for creating a metal etch mask which may be utilized for, we encourage you to share that experience with our LandOfFree.com community. Your opinion is very important and Process for creating a metal etch mask which may be utilized for will most certainly appreciate the feedback.

Rate now

Comments { 0 }

Profile ID: LFUS-PAI-O-2009957