Process for creating a deposit of silicon oxide on a traveling s

Details Process for creating a deposit of silicon oxide on a traveling s Process for creating a deposit of silicon oxide on a traveling s

1994-04-28

1996-11-19

Gorgos, Kathryn

Coating processes

Direct application of electrical, magnetic, wave, or...

Plasma

4272553, B05D 306

Patent

active

055760767

ABSTRACT:
According to the process the substrate (2) is subjected to an electrical discharge with a dielectric barrier, for example a discharge in the presence of an atmosphere containing a silane, an oxidizing gas, NO, N.sub.2 O, CO.sub.2 or O.sub.2, in particular, and a neutral carrier gas such as nitrogen or argon. A controlled atmosphere containing the silane and the oxidizing gas is maintained in the immediate vicinity of the electrode, around the electrode (6) employed for the electrical discharge, while avoiding the process being perturbed by atmospheric air entrained, for example, by the substrate (2) as it travels (3).

REFERENCES:
patent: 3824398 (1974-07-01), Boom
patent: 4940521 (1990-07-01), Dinter et al.
patent: 5013584 (1991-05-01), Wreede et al.
patent: 5040046 (1991-08-01), Chhabra et al.
patent: 5160592 (1992-11-01), Spitsin et al.
patent: 5340621 (1994-08-01), Matsumoto et al.
Patent Abstracts of Japan, vol. 7, No. 40, Feb. 17, 1983 & JP-A-57 192 032 (Hitachi Seisakusho KK, Nov. 16, 1982).
Patent Abstracts of Japan, vol. 8, No. 15, Jan. 21, 1984 & JP-A-58 181 865 (Citizen Tokei KK), Oct. 24, 1983.
"A Production Reaction for Continuous Deposition of Silicon Dioxide," W. C. Benzing et al., Solid State Technology, vol. 16, No. 11, Nov. 1973, pp. 37-42.

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