Process for counter doping N-type silicon in Schottky device...

Details Process for counter doping N-type silicon in Schottky device... Process for counter doping N-type silicon in Schottky device...

2005-01-25

2005-01-25

Brock, II, Paul E (Department: 2815)

Semiconductor device manufacturing: process

Introduction of conductivity modifying dopant into...

Ion implantation of dopant into semiconductor region

C438S570000, C438S583000, C257S454000, C257S456000, C257S473000, C257S486000

Reexamination Certificate

active

06846729

ABSTRACT:
A Schottky diode is adjusted by implanting an implant species by way of a titanium silicide Schottky contact and driving the implant species into the underlying silicon substrate by a rapid anneal. The implant is at a low energy, (e.g. about 10 keV) and at a low dose (e.g. less than about 9E12 atoms per cm2) such that the barrier height is slightly increased and the leakage current reduced without forming pn junction and retaining the peak boron concentration in the titanium silicide layer.

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patent: 4914500 (1990-04-01), Liu et al.
patent: 5962893 (1999-10-01), Omura et al.
patent: 6049108 (2000-04-01), Williams et al.
patent: 6078090 (2000-06-01), Williams et al.
patent: 04005860 (1992-01-01), None

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