Single-crystal – oriented-crystal – and epitaxy growth processes; – Processes of growth from liquid or supercritical state – Having pulling during growth
Reexamination Certificate
2005-07-05
2005-07-05
Deo, Duy-Vu (Department: 1765)
Single-crystal, oriented-crystal, and epitaxy growth processes;
Processes of growth from liquid or supercritical state
Having pulling during growth
C117S015000, C117S035000, C117S208000
Reexamination Certificate
active
06913647
ABSTRACT:
A process for producing silicon which is substantially free of agglomerated intrinsic point defects in an ingot having a vacancy dominated region. An ingot is grown generally in accordance with the Czochralski method. While intrinsic point defects diffuse from or are annihilated within the ingot, at least a portion of the ingot is maintained above a temperature TAat which intrinsic point defects agglomerate. The achievement of defect free silicon is thus substantially decoupled from process parameters, such as pull rate, and system parameters, such as axial temperature gradient in the ingot.
REFERENCES:
patent: 3997368 (1976-12-01), Petroff et al.
patent: 4193783 (1980-03-01), Matsushita
patent: 4314595 (1982-02-01), Yamamoto et al.
patent: 4350560 (1982-09-01), Helgeland et al.
patent: 4981549 (1991-01-01), Yamashita et al.
patent: 5246535 (1993-09-01), Kawashima et al.
patent: 5264189 (1993-11-01), Yamashita et al.
patent: 5474020 (1995-12-01), Bell et al.
patent: 5485803 (1996-01-01), Habu
patent: 5487354 (1996-01-01), von Ammon et al.
patent: 5502010 (1996-03-01), Nadahara et al.
patent: 5593494 (1997-01-01), Falster
patent: 5667584 (1997-09-01), Takano et al.
patent: 5704973 (1998-01-01), Sakurada et al.
patent: 5728211 (1998-03-01), Takano et al.
patent: 5789309 (1998-08-01), Hellwig
patent: 5846322 (1998-12-01), Schulmann et al.
patent: 5919302 (1999-07-01), Falster et al.
patent: 5922127 (1999-07-01), Luter et al.
patent: 5935320 (1999-08-01), Graef et al.
patent: 5942032 (1999-08-01), Kim et al.
patent: 5954873 (1999-09-01), Hourai et al.
patent: 5958133 (1999-09-01), Boulaev et al.
patent: 5968262 (1999-10-01), Saishouji et al.
patent: 5968264 (1999-10-01), Iida et al.
patent: 6045610 (2000-04-01), Park et al.
patent: 6053974 (2000-04-01), Luter et al.
patent: 6093913 (2000-07-01), Schrenker et al.
patent: 6153008 (2000-11-01), von Ammon et al.
patent: 6228164 (2001-05-01), von Ammon et al.
patent: 6236104 (2001-05-01), Falster
patent: 6328795 (2001-12-01), Falster et al.
patent: 6562123 (2003-05-01), Falster et al.
patent: 43 23 964 (1994-01-01), None
patent: 44 14 947 (1995-08-01), None
patent: 198 06 045 (1998-08-01), None
patent: 0 504 837 (1992-09-01), None
patent: 0 536 958 (1993-04-01), None
patent: 0 716 168 (1996-06-01), None
patent: 0 503 816 (1996-09-01), None
patent: 0 747 513 (1996-12-01), None
patent: 0 799 913 (1997-10-01), None
patent: 0 866 150 (1998-09-01), None
patent: 0 890 662 (1999-01-01), None
patent: 0 909 840 (1999-04-01), None
patent: 0 962 556 (1999-08-01), None
patent: 0 962 555 (1999-12-01), None
patent: 0 962 557 (1999-12-01), None
patent: 2 137 524 (1984-10-01), None
patent: 2 182 262 (1987-05-01), None
patent: HEI 2-180789 (1990-07-01), None
patent: HEI 2-267195 (1990-10-01), None
patent: HEI 3-93700 (1991-04-01), None
patent: 7-29878 (1992-02-01), None
patent: HEI 4-108682 (1992-04-01), None
patent: HEI 7-041383 (1995-02-01), None
patent: HEI 7-206591 (1995-08-01), None
patent: HEI 8-012493 (1996-01-01), None
patent: HEI 8-208374 (1996-08-01), None
patent: HEI 8-268794 (1996-10-01), None
patent: HEI 8-330316 (1996-12-01), None
patent: HEI 9-202690 (1997-08-01), None
patent: HEI 11-157995 (1999-06-01), None
patent: HEI 11-180800 (1999-07-01), None
patent: HEI 11-189495 (1999-07-01), None
patent: HEI 11-199386 (1999-07-01), None
patent: HEI 11-199387 (1999-07-01), None
patent: WO 97/26393 (1997-07-01), None
patent: WO 98/45507 (1998-10-01), None
patent: WO 98/45508 (1998-10-01), None
patent: WO 98/45509 (1998-10-01), None
patent: WO 98/45510 (1998-10-01), None
Abe, T., et al., “Swirl Defects in Float-Zoned Silicon Crystals,” Physics., vol. 116B, (1983), pp. 139-147.
Abe, T., et al., “The Characteristics of Nitrogen in Silicon Crystals,” VLSI Science and Technology/1985, (Electrochem. Soc. Pennington, 1985), Proceedings vol. 85-5, (1985), pp. 543-551.
Abe, T., et al., “Behavior of Point Defects in FZ Silicon Crystals,” Semiconductor Silicon 1990,Proceedings of the Sixth International Symposium of Silicon Materials Science and Technology,vol. 90-7 (1990), pp. 105-118.
Abe, T., et al., “Dynamic Behavior of Intrinsic Point Defects in FZ and CZ Silicon Crystals,” Mat. Res. Soc. Symp. Proc., vol. 262, (1992), pp. 3-13.
Borionetti, G., et al., “Investigation of Low Density Defects in Czochralski Silicon Crystals; Their Detectability, Formation Kinetics and Influence on Gate Oxide Integrity,” Electrochemical Society Proceedings, vol. 96-13, pp. 160-169.
De Kock, A.J.R., “Microdefects in Swirl-Free Silicon Crystals,” pp. 83-94 (source unknown) (date unknown).
De Kock, A.J.R., “The Elimination of Vacancy-Cluster Formation in Dislocation—Free Silicon Crystals,” J. of the Electrochem. Soc.: Solid-State Science and Technology, vol. 118, No. 11, (Nov. 1971), pp. 1851-1856.
De Kock, A.J.R., et al., “Effect of Growth Parameters on Formation and Elimination of Vacancy Clusters in Dislocation-Free Silicon Crystals,” Journal of Crystal Growth, vol. 22 (1974), pp. 311-320.
De Kock, A.J.R., “Point Defect Condensation in Dislocation-Free Silicon Crystals”, Semiconductor/Silicon, 1977, pp. 508-520.
De Kock, A.J.R., et al., “The Effect of Doping on the Formation of Swirl Defects in Dislocation-Free Czochralski-Grown Silicon Crystals,”Journal of Crystal Growth, vol. 49 (1980) pp. 718-734.
Dornberger, E., et al., “The Dependence of Ring Like Distributed Stacking Faults on the Axial Temperature Gradient Czochralski Silicon Crystals,” Electrochemical Society Proceedings, vol. 95-4 (1995) pp. 294-305.
Dornberger, E., et al., “Simulation of Grown-in Voids in Czochralski Silicon Crystals,”Electrochemical Society Proceedings,vol. 97, No. 22 pp. 40-49.
Dornberger, E. et al., “Simulation of Non-Uniform Grown-in Void Distributions in Czochralski Silicon Crystals,” Electrochemical Society Proceedings, vol. 98-1 (1988) pp. 490-503.
Dornberger, E., et al., “The Impact of Dwell Time Above 900° C. During Crystal Growth on the Gate Oxide Integrity of Silicon Wafers,” Electrochemical Society Proceedings, vol. 96-13, pp. 140-151.
Eidenzon, A.M. et al., “Microdefects in Dislocation-Free Silicon Monocrystals,” TSVAM Met., No. 3 (1984) pp. 64-67.
Eidenzon, A.M., et al., “Influence of Growth Rate on Swirl Defects in Large Dislocation-Free Crystals of Silicon Grown by the Czochralski Method,” Sov. Phys. Crystallogr., vol. 30, No. 5 (1985) pp. 576-580, American Institute of Physics.
Eidenzon, A.M., et al., “Influence of Growth Microdefects on Formation of Microdefects During High-Temperature Treatment of Silicon,” Sov. Phys. Crystallogr., vol. 31, No. 2 (1985) pp. 199-203, American Institute of Physics.
Eidenzon, A.M., et al., “Specific Microdefects in Dislocation-Free Silicon Doped with Phosphorus,” Sov. Phys. Crystallogr., vol. 33, No. 4 (1988) pp. 561-565, American Institute of Physics.
Eidenzon, A.M., et al., “Interrelation Between Distributions of Growth- and Thermally-Induced Microdefects and Impurity Distribution in Dislocation-Free Silicon Grown by the Czochralski Method with a Constant Magnetic Field Acting on the Melt,” Sov. Phys. Crystallogr., vol. 35, No. 2 (1990) pp. 250-254, American Institute of Physics.
Eidenzon, A.M., et al., “Classification of Grown-in Microdefects in Czochralski-Grown Silicon Crystals,” Inorganic Materials, vol. 31(4), 1994, pp. 401-409.
Eidenzon, A.M., et al., “Defect-Free Silicon Crystals Grown by the Czochralski Technique,” Inorganic Materials, vol. 33, No. 3 (1997), pp. 219-225, Interperiodica Publishing.
Falster, R., et al., “Intrinsic Point-Defects and Reactions in the Growth of Large Silicon Crystals”, Electrochemical Society Proceedings, vol. 98-1, pp. 468-489.
Foll, H., et al. “The Formation of Swirl Defects in Silicon by Agglomeration of Self-Interstitials,” Journal of Crystal Growth, 1977, pp. 90-1087, vol. 40
Falster Robert J.
Korb Harold W.
Deo Duy-Vu
MEMC Electronic Materials , Inc.
Senniger Powers
Tran Binh X.
LandOfFree
Process for cooling a silicon ingot having a vacancy... does not yet have a rating. At this time, there are no reviews or comments for this patent.
If you have personal experience with Process for cooling a silicon ingot having a vacancy..., we encourage you to share that experience with our LandOfFree.com community. Your opinion is very important and Process for cooling a silicon ingot having a vacancy... will most certainly appreciate the feedback.
Profile ID: LFUS-PAI-O-3421860