Process for controlling dopant diffusion in a semiconductor laye

Details Process for controlling dopant diffusion in a semiconductor laye Process for controlling dopant diffusion in a semiconductor laye

1997-05-23

1998-03-24

Jackson, Jerome

Active solid-state devices (e.g., transistors, solid-state diode

With specified dopant

257 65, 437 80, H01L 29167

Patent

active

057316260

ABSTRACT:
Diffusion of ion-implanted dopant is controlled by incorporating electrically inactive impurity in a semiconductor layer by at least one crystal growth technique.

REFERENCES:
patent: 5116455 (1992-05-01), Daly
patent: 5338945 (1994-08-01), Baliga et al.
Nishikawa et al., "Reduction of transient boron diffusion in preamorphized Si by carbon implantation", Appl. Phys. Lett., vol. 60, No. 18, 2270-2, Apr. 1992.
"The Effects of Impurities on the Diffusion Length in Amorphous Silicon", Photovoltaic Specialties Conference, Kissimmee, vol. 1, No. 1984, May 1, 1994, Institute of Electrical and Electronics Engineers, pp. 330-335.

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