Process for controlling a memory-plane refresh of a dynamic rand

Static information storage and retrieval – Read/write circuit – Data refresh

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365203, 365205, 365210, G11C 700

Patent

active

060381876

ABSTRACT:
A process is for controlling a memory-plane refresh of a dynamic random-access memory. After having selected at least one first reference memory cell structurally similar to the memory cells of the memory plane, to store a first predetermined binary information item therein, the voltage across the terminals of the storage capacitor of this first reference memory cell is compared with a first predetermined reference voltage. When the voltage reaches the reference voltage, a control signal is delivered in response to which the memory plane is refreshed, then the first reference memory cell is again selected in order to refresh its contents.

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