Semiconductor device manufacturing: process – Coating of substrate containing semiconductor region or of... – Insulative material deposited upon semiconductive substrate
Reexamination Certificate
2007-05-22
2007-05-22
Estrada, Michelle (Department: 2823)
Semiconductor device manufacturing: process
Coating of substrate containing semiconductor region or of...
Insulative material deposited upon semiconductive substrate
C438S761000, C438S792000, C257SE23134, C257SE23118, C257SE21275
Reexamination Certificate
active
10661104
ABSTRACT:
A method is provided for contact opening definition for active element electrical connections. According to the method, a layer of BPSG is formed on a surface of an integrated circuit, and a transparent layer of nitride UV is formed above the layer of BPSG. Preferably, the transparent layer of nitride UV is formed by deposition using an HDP process and has a thickness of less than about 500 Å. In one embodiment, after forming a transparent layer of nitride UV, two overlapped layers of BARC and resist are formed on the surface of the integrated circuit. Also provided is a machine-readable medium encoded with a program for contact opening definition for active element electrical connections.
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Bongini Stephen
Fleit Kain Gibbons Gutman Bongini & Bianco P.L.
Jorgenson Lisa K.
STMicroelectronics S.r.l.
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