Process for chemical vapor desposition of a nitrogen-doped...

Details Process for chemical vapor desposition of a nitrogen-doped... Process for chemical vapor desposition of a nitrogen-doped...

2007-05-01

2007-05-01

Nhu, David (Department: 2818)

Semiconductor device manufacturing: process

Coating with electrically or thermally conductive material

To form ohmic contact to semiconductive material

C438S513000, C438S477000, C257SE21008, C257S017000, C257S274000, C257S311000

Reexamination Certificate

active

10825889

ABSTRACT:
Nitrogen doped titanium oxide coatings on a hot glass substrate are prepared by providing a uniform vaporized reactant mixture containing a titanium compound, a nitrogen compound and an oxygen-containing compound, and delivering the reactant mixture to the surface of a ribbon of hot glass, where the compounds react to form a nitrogen doped titanium oxide coating. The nitrogen doped titanium oxide coatings deposited in accordance with the invention demonstrate an increase in visible light absorption.

REFERENCES:
patent: 4918138 (1990-04-01), Hara et al.
patent: 5981426 (1999-11-01), Langford et al.
patent: 6180548 (2001-01-01), Taoda et al.
patent: 6306343 (2001-10-01), Sugiyama
patent: 6680277 (2004-01-01), Morikawa et al.
patent: 7071139 (2006-07-01), Gole
patent: WO 98/41480 (1998-09-01), None

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