Process for chemical vapor deposition of films on silicon wafers

Adhesive bonding and miscellaneous chemical manufacture – Delaminating processes adapted for specified product – Delaminating in preparation for post processing recycling step

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156613, C30B 2510

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active

043092403

ABSTRACT:
A process for depositing films of uniform thickness on silicon wafers at a uniform deposition rate among all wafers processed at the same time. The wafers are vertically oriented and arranged in a spaced-apart mutually parallel fashion and are supported within a horizontally-oriented long quartz tube which is evacuated at one end by a vacuum pump. A heating element surrounding the tube heats the wafers supported within it. At least one type of reactant gas is introduced into the enclosure in a generally confined region below the wafers and between the wafer arrangement and a wall of the enclosure. The gas, which is directed upwards between adjacent wafers and dispersed across the entire surface of the wafers, chemically reacts to deposit a uniform film on the wafers. Unreacted and exhaust gases are evacuated from the enclosure by the vacuum pump in a horizontal direction of flow above the wafer arrangement.

REFERENCES:
patent: 3471326 (1969-10-01), Kappelmeyer et al.
patent: 3637434 (1972-01-01), Nakanuma et al.
patent: 4203387 (1980-05-01), McMullen et al.
patent: 4211182 (1980-07-01), Ranowski
Technical Digest, No. 11, Jul. 1968, Western Electric Co., Inc., Whitner.

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