Process for bonding semiconductor chips to substrates

Details Process for bonding semiconductor chips to substrates Process for bonding semiconductor chips to substrates

1991-02-19

1991-07-02

Heinrich, Samuel M.

Metal fusion bonding

Process

Using high frequency vibratory energy

228116, 2281802, B23K 2000, B23K 2010, H05K 332, H01L 2158

Patent

active

050279955

ABSTRACT:
A semiconductor chip (1) is bonded to a substrate (2) serving as a component housing, a contact part, an insulative part or a connecting part without the use of a high-temperature process or any additional bonding medium such as solder or flux. The backside of the semiconductor chip (1) or substrate (2) is structured to include specially formed bumps (3) for the necessary connections. A ductile metal is used for these bumps (3). The bond to the substrate (2) is formed by using pressure and/or ultrasonic energy. The process according to this invention is particularly suitable for bonding components in data link receivers, optoelectronic couplers, transmitters (LEDs, IREDs) and ISDN modules.

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Elektronik Produktion & Pruftechnik, Oct. 1987, p. 140.
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Patent Abstracts of Japan, E567, vol. 11, No. 390, JP-62-154648, Dec. 19, 1987.

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