Process for adjusting the carrier lifetime in a semiconductor co

Details Process for adjusting the carrier lifetime in a semiconductor co Process for adjusting the carrier lifetime in a semiconductor co

1999-07-30

2000-12-12

Bowers, Charles

Semiconductor device manufacturing: process

Introduction of conductivity modifying dopant into...

Diffusing a dopant

438531, 438549, H01L 21426, H01L 21425

Patent

active

061598305

ABSTRACT:
In a process for adjusting the carrier lifetime in a semiconductor component (1) by means of particle irradiation (P), at least two defect regions (10, 11, 12, 13) are produced in the semiconductor component (1). In this process, a particle beam (P), consisting of particles (a, b, c, d) with at least approximately the same initial energy, is acted on by at least one means (2), before reaching the semiconductor component (1), in such a way that the particles (a, b, c, d) subsequently have different energy values, at least two energy value groups being distinguishable. It is thereby possible, with a single particle irradiation operation, to produce an arbitrary number of defect regions whose arrangement and weighting is arbitrarily selectable.

REFERENCES:
patent: 4357178 (1982-11-01), Bergeron et al.
patent: 4394180 (1983-07-01), Dearnaley et al.
patent: 5441900 (1995-08-01), Bulucea et al.
Characteristics of Bipolar Transistors with Various Depth N+ Buried Layers Formed by High Energy Ion Implantation by A. Tamba et al, pp. 141-144, published by Extended Abstracts of the 20.sup.th (1998 International) Conference on Solid State Materials, Tokyo, 1988.
Measuring the generation lifetime profile modified by MeV H+ ion implantation in silicon by N. Q. Khanh et al, pp. 111-115, published by Elsevier Science B.V., 1999.

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