Process depending on plasma discharges sustained by inductive co

Details Process depending on plasma discharges sustained by inductive co Process depending on plasma discharges sustained by inductive co

1999-11-30

2000-10-03

Powell, William

Semiconductor device manufacturing: process

Chemical etching

Vapor phase etching

156345, 438729, H01L 2100

Patent

active

061272752

ABSTRACT:
A process for fabricating a product 28, 119. The process comprises the steps of subjecting a substrate to a composition of entities, at least one of the entities emanating from a species generated by a gaseous discharge excited by a high frequency field in which the vector sum of phase and anti-phase capacitive coupled voltages from the inductive coupling structure substantially balances.

REFERENCES:
patent: 5565074 (1996-10-01), Qian et al.
patent: 5685941 (1997-11-01), Forster et al.

Affiliated with

Also associated with

Rating

Process depending on plasma discharges sustained by inductive co does not yet have a rating. At this time, there are no reviews or comments for this patent.

If you have personal experience with Process depending on plasma discharges sustained by inductive co, we encourage you to share that experience with our LandOfFree.com community. Your opinion is very important and Process depending on plasma discharges sustained by inductive co will most certainly appreciate the feedback.

Rate now

Comments { 0 }

Profile ID: LFUS-PAI-O-195020