Process chamber for semiconductor substrates

Details Process chamber for semiconductor substrates Process chamber for semiconductor substrates

1995-09-19

1997-03-18

Powell, William

Adhesive bonding and miscellaneous chemical manufacture

Differential fluid etching apparatus

With microwave gas energizing means

156345, 1566391, B44C 122, H01L 2100

Patent

active

056118864

ABSTRACT:
A process chamber configurable for the execution of discrete subprocesses in a substrate coating process such as photolithography. Two vertically staggered rings disposed within the process chamber channel a flow of gas through the chamber and retain fluent chemical within the process environment. A replaceable liner further enables reconfiguration of the chamber. The chamber is used for low-velocity dispensing of fluent process chemical onto the substrate surface with a laminar exhaust gas flow through ventilation passages formed about the rings. The chamber is also used during high-velocity spinning of the substrate for even process chemical distribution in a solvent saturated atmosphere. The ventilation passages enable high exhaust flow through the chamber while minimizing the direct impingement of exhaust air on the substrate.

REFERENCES:
patent: 4822450 (1989-04-01), Davis et al.
patent: 4838979 (1989-06-01), Nishida et al.
patent: 4875989 (1989-10-01), Davis et al.
patent: 4911103 (1990-03-01), Davis et al.
patent: 4949671 (1990-08-01), Davis et al.
patent: 5138973 (1992-08-01), Davis et al.

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