Process and unit for production of polycrystalline silicon film

Details Process and unit for production of polycrystalline silicon film Process and unit for production of polycrystalline silicon film

2005-04-26

2005-04-26

Niebling, John F. (Department: 2812)

Semiconductor device manufacturing: process

Formation of semiconductive active region on any substrate

Polycrystalline semiconductor

C438S097000, C438S164000, C438S166000, C438S308000, C438S378000, C438S487000, C438S489000, C438S795000, C438S969000

Reexamination Certificate

active

06884699

ABSTRACT:
A process for making a polycrystalline silicon film includes forming, on a glass substrate, an amorphous silicon film having a first region and a second region that contacts the first region, forming a first polycrystalline portion by irradiating the first region of the amorphous silicon film with laser light having a wavelength not less than 390 nm and not more than 640 nm and forming a second polycrystalline portion that contacts the first polycrystalline portion by irradiating the second region and the portion of the region of the first polycrystalline portion that contacts the second region of the amorphous silicon film with the laser light.

REFERENCES:
patent: 5366926 (1994-11-01), Mei et al.
patent: 5766989 (1998-06-01), Maegawa et al.
patent: 5811327 (1998-09-01), Funai et al.
patent: 6190949 (2001-02-01), Noguchi et al.
patent: 6437284 (2002-08-01), Okamoto et al.
patent: 6566683 (2003-05-01), Ogawa et al.
patent: 6596613 (2003-07-01), Kusumoto et al.
patent: 6607971 (2003-08-01), Moriguchi et al.
patent: 6608326 (2003-08-01), Shinagawa et al.
patent: 20020068391 (2002-06-01), Jung
patent: 2000-260731 (2000-09-01), None
patent: 2000-269133 (2000-09-01), None
U.S. patent application Ser. No. 09/599,645, Okamoto et al., filed Jun. 13, 2000.
U.S. patent application Ser. No. 09/674,645, filed Nov. 2, 2000.
Ogawa, T. et al.; “Thin Film Transistors of Polysilicon Recrystallized . . . Q-Switched Nd:YAG Laser”, EuroDisplay '99, pp. 81-84.
Ferreira, I. et al.; “Undoped and doped crystalline silicon films obtained by Nd-YAG laser”, Thin Solid Films, 317 (1998) pp. 140-143.
Helen, Y. et al.; “Reproducible High Field . . . Nd:YVO4Laser Crystallization”, 1999 IEEE.
Rezek, B. et al.; “Polycrystalline Silicon Thin . . . Amorphous Silicon”, Jpn. J. Appl. Phys., vol. 38 (1999), pp. L1083-1084.

Affiliated with

Also associated with

Rating

Process and unit for production of polycrystalline silicon film does not yet have a rating. At this time, there are no reviews or comments for this patent.

If you have personal experience with Process and unit for production of polycrystalline silicon film, we encourage you to share that experience with our LandOfFree.com community. Your opinion is very important and Process and unit for production of polycrystalline silicon film will most certainly appreciate the feedback.

Rate now

Comments { 0 }

Profile ID: LFUS-PAI-O-3405774