Process and system for laser annealing and laser-annealed...

Details Process and system for laser annealing and laser-annealed... Process and system for laser annealing and laser-annealed...

2007-01-30

2010-11-23

Smith, Matthew S (Department: 2823)

Semiconductor device manufacturing: process

Formation of semiconductive active region on any substrate

Amorphous semiconductor

C438S151000, C438S164000, C438S166000, C438S662000, C257SE51005, C257S064000

Reexamination Certificate

active

07838397

ABSTRACT:
In a laser annealing process: the first to fourth sections of a bandlike area of a nonmonocrystalline semiconductor film are consecutively scanned and irradiated with laser light so as to produce a fused region in the bandlike area, where the fourth section contains a portion required to have higher crystallinity than other portions of the bandlike area. In the first section, the width of the fused region is substantially uniform. In the second section, the width of the fused region is stepwise or continuously decreased from the width of the fused region in the first section. In the third section, the width of the fused region is stepwise or continuously increased from the width of the fused region at the boundary between the second and third sections. In the fourth section, the width of the fused region at the boundary between the third and fourth sections is substantially uniformly maintained.

REFERENCES:
patent: 5891764 (1999-04-01), Ishihara et al.
patent: 7220627 (2007-05-01), Yamazaki et al.
patent: 2003/0129853 (2003-07-01), Nakajima et al.
patent: 2007/0184641 (2007-08-01), Tanaka
patent: 8-139331 (1996-05-01), None
patent: 2004-228160 (2004-08-01), None

Affiliated with

Also associated with

Rating

Process and system for laser annealing and laser-annealed... does not yet have a rating. At this time, there are no reviews or comments for this patent.

If you have personal experience with Process and system for laser annealing and laser-annealed..., we encourage you to share that experience with our LandOfFree.com community. Your opinion is very important and Process and system for laser annealing and laser-annealed... will most certainly appreciate the feedback.

Rate now

Comments { 0 }

Profile ID: LFUS-PAI-O-4251348