Process and system for flattening secondary edgebeads on resist

Radiation imagery chemistry: process – composition – or product th – Imaging affecting physical property of radiation sensitive... – Processing feature prior to imaging

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430311, 427240, 427273, 134 33, G03F 716

Patent

active

057503176

ABSTRACT:
A method and system of flattening resist mounds formed during a wet edgebead operation. The wet edgebead operation is used to remove edgebeads formed when a resist material is deposited on a semiconductor wafer. Solvent is introduced to the semiconductor wafer at the area containing the resist mounds to soften them, and the semiconductor wafer is spun at a high speed to flatten the mounds.

REFERENCES:
patent: 4732785 (1988-03-01), Brewer
patent: 5426017 (1995-06-01), Johnson

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