Process and integration scheme for a high sidewall coverage...

Details Process and integration scheme for a high sidewall coverage... Process and integration scheme for a high sidewall coverage...

2008-07-08

2008-07-08

Nhu, David (Department: 2818)

Semiconductor device manufacturing: process

Coating with electrically or thermally conductive material

To form ohmic contact to semiconductive material

C438S680000, C257SE21170, C257SE21585, C257SE21632

Reexamination Certificate

active

07396755

ABSTRACT:
The present invention provides a method of forming a metal seed layer100. The method includes physical vapor deposition of seed metal200within an opening140located in a dielectric layer135of a substrate110. The method also includes a RF plasma etch of the seed metal200deposited in the opening140simultaneously with conducting the physical vapor deposition of the seed metal200.

REFERENCES:
patent: 5869395 (1999-02-01), Yim
patent: 6340435 (2002-01-01), Bjorkman et al.
patent: 6669858 (2003-12-01), Bjorkman et al.
patent: T39520 (2005-05-01), Haider et al.
patent: 2004/0061237 (2004-04-01), Zhao et al.
patent: 2006/0258142 (2006-11-01), Haider et al.

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